kaneda-jjap-35-8

Data for reference kaneda-jjap-35-8

Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane

N Kaneda, T Detchprohm, K Hiramatsu, N Sawaki

Japanese Journal of Applied Physics 35(4B), 8 (1996).

A Si-doped GaN layer was grown by MOVPE (metal-organic vapor phase epitaxy) using tetraethylsilane (TeESi) as the dopant. The Hall effect was studied between 11K and 300K. The electron concentration was observed to increase with the increase in the TeESi flow rate. The activation energy ED for ionization of shallow donors was determined to be 27meV.

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, June 26, 1996 3:00:13 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.