cho-jjap-35-45

Data for reference cho-jjap-35-45

Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy

SH Cho, U Tanaka, K Hata, T Maruyama, K Akimoto

Japanese Journal of Applied Physics 35(5B), 45 (1996).

Effects of nitrogen ion irradiation on photoluminescence (PL) properties at 77K of undoped GaN grown by plasma enhanced molecular beam epitaxy were investigated. It was found that for epitaxial layers grown under ion irradiation conditions, the PL spectra were dominated by near band-edge emission at 357nm (3.47eV). However, deep-level emission at around 567nm (2.2eV) was also observed and the intensity of which was considerably strong. On the other hand, for GaN films grown with no ion irradiation, the intensity of the deep-level emission was two orders of magnitude less than that of the near band-edge emission. This result suggests that the nitrogen ions degrade the PL properties, i.e., create defect levels relating to emission at around 567nm (2.2eV).

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, June 26, 1996 3:20:17 AM

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