Data for reference kurai-jjap-35-1637

Growth and characterization of thick GaN by sublimation method and homoepitaxial growth by metalorganic chemical vapor deposition

S. Kurai, T. Abe, Y. Naoi, S. Sakai

Japanese Journal of Applied Physics 35(3), 1637 (1996).

This item is cited by the following items in the database:

  1. Current status of GaN crystal growth by sublimation sandwich technique

Contributed by A submitted manuscript, on Monday, August 31, 1998 7:05:26 PM

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