kai-jjap-35-1424

Data for reference kai-jjap-35-1424

Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method

A Kai, K Okada, Y Yamada, T Taguchi, F Sasaki, S Kobayashi, T Tani, H Taniguchi

Japanese Journal of Applied Physics 35(2B), 1424 (1996).

Hexagonal gallium nitride (GaN) films are grown on aluminum nitride ceramic substrates in gallium and nitrogen plasmas excited by microwaves. The band-edge photoluminescence properties of the GaN films are investigated at 77 K and at room temperature. A strong ultraviolet (UV) emission, consisting of two components with different decay characteristics, is observed. The fast decay component is due to free exciton recombination and the slow one is ascribed to recombination of localized excitons.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, October 19, 1996 8:27:14 AM

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