Data for reference sugawara-jjap-35-124

Model for lasing Oscillation due to Bi-Excitons and Localized Biexcitons in Wide-Gap Semiconductor Quantum Wells

M. Sugawara

Japanese Journal of Applied Physics 35, 124 (1996).

This item is cited by the following items in the database:

  1. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

Contributed by A submitted manuscript, on July 31, 1997 11:59:55 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 6:05:53 PM.
© 1998 The Materials Research Society