Data for reference nakamura-jjap-34-l797

High-Brightness InGaN Blue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama

Japanese Journal of Applied Physics 34(7A), L797 (1995).

This item is cited by the following items in the database:

  1. LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
  2. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  3. Luminescent properties of gallium nitride layers grown by vapor-phase epitaxy in a chloride system on silicon carbide substrates
  4. Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  5. Physical Properties of Bulk GaN Crystals Grown by HVPE
  6. MBE Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant
  7. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  8. The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  9. Preparation of stoichiometric GaN(0001)-1×1: an XPS study
  10. Core-Level Photoemission From Stoichiometric GaN(0001)-1×1

Contributed by Vladimir I. Nikolaev from plast.ioffe.rssi.ru. on Friday, June 21, 1996 12:21:20 PM

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