masu-jjap-34-l760

Data for reference masu-jjap-34-l760

Transmission Electron Microscopic Observation of AlN/Alpha Al2o3 Heteroepitaxial Interface with Initial Nitriding Ain Layer

K Masu, Y Nakamura, T Yamazaki, et al.

Japanese Journal of Applied Physics 34(6), L760 (1995).

The AlN/alpha-Al2O3 heteroepitaxial interface is investigated using a transmission electron microscope. The epitaxial AlN film is deposited by metalorganic chemical vapor deposition with and without initial nitriding. The initial nitriding method is to convert the alpha-Al2O3 substrate surface to a nanometer-thick AlN single-crystal buffer layer in NH3 ambient just before AlN deposition. The (1 ($) over bar 210)AlN/(1 ($) over bar 102) alpha-Al2O3 interface with initial nitriding is found to be atomically flat, and no dislocation inside the postdeposited AIN is observed. We have confirmed that initial nitriding is excellent in improving the crystal quality of the AlN epitaxial layer.

Contributed by E. Hellman

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