Data for reference cho-jjap-34-l236

Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy

SH Cho, H Sakamoto, K Akimoto, Y Okada, M Akimoto

Japanese Journal of Applied Physics 34, L236 (1995).

This item is cited by the following items in the database:

  1. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  2. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Contributed by Sergei Yu. Karpov from sunphys.ioffe.rssi.ru. on Wednesday, May 22, 1996 6:04:17 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 7:40:52 PM.
© 1998 The Materials Research Society