Data for reference nido-jjap-34-l1513

Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method

M Nido

Japanese Journal of Applied Physics 34(11B), L1513 (1995).

The effect of tensile and compressive biaxial strain on the valence band structures around the valence band edge, for both cubic and hexagonal GaN were analyzed using a tight-binding method, which took the spin-orbit interaction into account.

This item is cited by the following items in the database:

  1. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  2. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

Contributed by Jacek A. Majewski from esaki.wsi.physik.tu-muenchen.de. on Friday, May 31, 1996 11:24:45 AM

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