Data for reference sakai-jjap-34-l1429

GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy

H. Sakai, T. Koide, H. Suzuki, M. Yamaguchi, S. Yamasaki, M. Koike, H. Amano, I. Akasaki

Japanese Journal of Applied Physics 34(11A), L1429 (1995).

This item is cited by the following items in the database:

  1. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  2. The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  3. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

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