Data for reference nakamura-jjap-34-l1332

Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes

S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai

Japanese Journal of Applied Physics 34(10B), L1332 (1995).

Superbright green InGaN single quantum well (SQW) structure light- emitting diodes (LEDs) with a luminous intensity of 12 Cd were fabricated. The luminous intensity of these green InGaN SQW LEDs (12 Cd) was about 100 times higher than that of conventional green GaP- LEDs (0.1 Cd). The output power, the external quantum efficiency, the peak wavelength and the FWHM of green SQW LEDs were 3 mW, 6.3%, 520 nm and 30 nm respectively, at a forward current of 20 mA. The p-AlGaN/InGaN/n-GaN structure of green InGaN SQW LEDs were grown by MOCVD deposition on sapphire substrates.

This item is cited by the following items in the database:

  1. Study of GaN films grown by metalorganic chemical vapour deposition
  2. LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
  3. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
  4. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  5. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  6. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  7. Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  8. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  9. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  10. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  11. MOVPE of Thick InGaN on Sapphire Substrate
  12. AVALANCHE BREAKDOWN LUMINESCENCE OF InGaN/AlGaN/GaN HETEROSTRUCTURES
  13. Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
  14. MOVPE growth optimization of high quality InGaN films.
  15. Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
  16. Physical Properties of Bulk GaN Crystals Grown by HVPE
  17. Electron Beam Pumped MQW InGaN/GaN Laser
  18. Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes
  19. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
  20. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  21. The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  22. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

Contributed by Toby Strite from internet-gw.zurich.ibm.ch.

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