Data for reference khan-jjap-34-6375

Schottky Barrier on n-Type Al0.14Ga0.86N Grown by Oganometallic Vapor Phase Epitaxy

M.R.H. Khan, H. Nakayama, T. Detchprohm, K. Hiramatsu, N. Sawaki

Japanese Journal of Applied Physics 34(12A), 6375 (1995).

Schottky barrier diodes of Au-n-AlGaN grown by OMVPE were obtained and characterized between 77 K and 373 K. Under forward bias the value of the ideality parameter n = 1.41 and the threshold voltage is 0.75 V. The reverse bias leakage current is below 10-10 A on a reverse bias of 10 V. The barrier height (ΦB) was determined to be (1.17 +/- 0.03) eV and (1.3 +/- 0.05) eV by the I-V and the C-V measurement respectively.

Contributed by Toby Strite from internet-gw.zurich.ibm.ch. on Friday, January 19, 1996 5:06:35 AM

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