Data for reference akasaki-jjap-34-1517

Stimulated-Emission by Current Injection from an AlGaN/GaN/GaInN quantum-well device

I Akasaki, H Amano, S Sota , H Sakai, T Tanaka, M Koike

Japanese Journal of Applied Physics 34(11B), 1517 (1995).

Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.

This item is cited by the following items in the database:

  1. The Morphology and Cathodoluminescence of GaN Thin Films

Contributed by Carol Trager-Cowan from cowan-physics.phys.strath.ac.uk. on Thursday, May 30, 1996 5:36:12 PM

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