Data for reference kitamura-jjap-24-l1184

fabrication of GaN hexagonal pyramids on dot-patterned GaN/Sapphire substrates via selective metalorganic vapor phase epitaxy

S. Kitamura, K. Hiramatsu, N. Sawaki

Japanese Journal of Applied Physics 24, L1184 (1995).

This item is cited by the following items in the database:

  1. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
  2. Wet Chemical Etching of AlN Single Crystals

Contributed by A submitted manuscript, on Wednesday, July 22, 1998 1:13:51 PM

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