Data for reference strite-jjap-33-l699

GaN Core Relaxation Effects and Their Ramifications for P-Type Doping

S Strite

Japanese Journal of Applied Physics 33(5), L699 (1994).

Evidence for the presence of d-electron core relaxation effects in GaN and InN is examined by comparing the physical properties of these materials with those of AlN and the group III arsenides and phosphides. The comparison strongly suggests that d-electron core relaxation effects play an important role in the properties of the III-V nitride semiconductors. Based on these observations, it is proposed that Ca and C be investigated as dopants potentially superior to Mg for p-type doping of GaN.

This item is cited by the following items in the database:

  1. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  2. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by E. Hellman

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