ohba-jjap-33-l1367

Data for reference ohba-jjap-33-l1367

H Atom Incorporation in Mg Doped GaN Grown by Metalorganic Chemical Vapor Deposition

Y Ohba, A Hatano

Japanese Journal of Applied Physics 33(10), L1367 (1994).

H-atom incorporation was studied for Mg-doped GaN grown by metalorganic chemical vapor deposition. H-atom incorporation was found to increase linearly with Mg concentration, suggesting the formation of simple complex between Mg and H atoms in GaN. Decrease of H-atom concentration was observed after thermal treatment in Ar, supporting the hypothesis that H-atom extraction plays an important role in obtaining low-resistivity p-type conduction.

This item is cited by the following items in the database:

p-doping of GaN by MOVPE

Contributed by E. Hellman

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