Data for reference kondow-jjap-33-l1056

Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source

Masahiko Kondow, Kazuhisa Uomi, Kazuhiko Hosomi, Teruo Mozume

Japanese Journal of Applied Physics 33, L1056 (1994).

This item is cited by the following items in the database:

  1. Surface Morphology and Structure of GaNxAs1-x
  2. Optical Properties of GaNAs Grown by MBE
  3. Electronic Properties of Ga(In)NAs Alloys

Contributed by A submitted manuscript, on Wednesday, June 25, 1997 11:39:05 AM

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