hacke-jjap-33-6443

Data for reference hacke-jjap-33-6443

Characterization of the shallow and deep levels in Si doped GaN grown by metal-organic vapor phase epitaxy

P Hacke, A Maekawa, N Koide, K Hiramatsu, N Sawaki

Japanese Journal of Applied Physics 33(12A), 6443 (1994).

A comprehensive study of the yellow photoluminescence (YL) in GaN epitaxial films grown by hybrid vapor phase epitaxy and by metal organic vapor phase epitaxy is presented including time-integrated and time-resolved photoluminescence (PL), PL excitation (PLE) and optically detected magnetic resonance (ODMR) experiments. ODMR reveals the participation of shallow and deep double donors based on the analysis of the g-values. This recombination model is supported by time-resolved investigations. PLE spectra show a close connection between the excitation processes of the YL band and of the inner transition of Fe/sup 3+/ at 1.293 eV. Two-color stimulation experiments prove energy transfer between YL and the Fe/sup 3+/ center by hole transfer, strongly confirming the YL recombination model involving a deep level 1.2 eV above the valence band (17 Refs.) Si doped GaN with room temperature free carrier concentration 1.1*10/sup 17/ cm/sup -3/ studied using the Hall effect exhibits exponential carrier freeze-out over a large range with activation energy 28.0+or-0.5 meV; however, resistivity dependence on temperature suggests carrier hopping occurs at low temperature. GaN with greater Si concentration displays metallic impurity band conduction following the two-band model. Deep level transient spectroscopy results show a negligible concentration of other deep donors from native defects or unintentionally included impurities indicating that the active shallow donor is uniquely Si; however, photoluminescence tests show broad yellow emission with peak energy approximately 2.2 eV commonly observed in Si doped GaN (21 Refs.)

Contributed by T. Eustis from mbe3.iiiv.cornell.edu. on Saturday, June 7, 1997 3:54:21 PM

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