Data for reference ohno-jjap-33-5766

ZnCdSe/ZnSe quantum-well laser-diode on a (711)A GaAs substrate

T. Ohno, Y. Kawaguchi, A. Ohki, T. Matsuoka

Japanese Journal of Applied Physics 33, 5766 (1994).

This item is cited by the following items in the database:

  1. Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by A submitted manuscript, on Wednesday, July 22, 1998 3:19:17 PM

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