Data for reference sato-jjap-33-4377

InN thin film growth using N2, NH3 and N2-He rf plasma

Y. Sato, S. Kakinuma, S. Sato

Japanese Journal of Applied Physics 33(7B), 4377 (1994).

InN thin films are prepared by reactive evaporation and the applicability of various rf plasmas such as N2, NH3 and N2-He mixtures is investigated. Many In droplets appear in the films when NH3 plasma is used. On the other hand, the number of droplets is greatly decreased and c-axis oriented InN films are obtained by addition of N2 to NH3 plasma or by using pure N2 plasma. In case of films prepared using N2-He plasma, although the c-axis oriented InN films are obtained, some damage appears in the films. In addition to these differences originating from the kind of gas used, the surface morphology and the crystallinity of the prepared films deteriorate as the gas pressure increases. These are improved by lowering the reaction ratio between In and N in the vapor phase.

This item cites the following items in the database:

  1. Optical band gap of indium nitride
  2. Preparation of InN epitaxial layers in InCl3-NH3 system
  3. Heteroepitaxial growth of InN by microwave-excited metalorganic chemical vapor phase epitaxy
  4. Morphology and structure of indium nitride films

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, February 11, 1997 11:43:32 AM

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