kuwano-jjap-33-3415

Data for reference kuwano-jjap-33-3415

Formation of Cubic GaN on (111)b GaAs by Metal Organic Vapor- phase Epitaxy with Dimethylhydrazine

N Kuwano, K Kobayashi, K Oki, et al.

Japanese Journal of Applied Physics 33(6), 3415 (1994).

The microstructure of GaN grown on (111)B GaAs by a metal-orgnic vapor-phase epitaxy method has been examined by transmission electron microscopy. Trimethylgallium and dimethylhydrazine were used as the source materials. It was revealed that the GaN crystal has a zincblende structure and is formed heterogeneously penetrating into the GaAs substrate. In a GaN crystal, stacking faults propagate on (111) planes other than those normal to the growth direction.

Contributed by E. Hellman
Modified by E. S. Hellman from ants.lucent.com. on Monday, February 17, 1997 12:24:03 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.