Data for reference guo-jjap-33-2453

Temperature Dependence of Band Gap Change in InN and AlN

Q. Guo, A. Yoshida

Japanese Journal of Applied Physics 33(5A), 2453 (1994).

The optical band gap of InN and AlN single crystal films was measured throught absorption spectra in the temperature range of 4.2 to 300 K.

This item is cited by the following items in the database:

  1. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  2. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals

Contributed by Vladimir I. Nikolaev from plast.ioffe.rssi.ru. on Thursday, June 20, 1996 8:25:50 AM

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