suzuki-jjap-33-1114

Data for reference suzuki-jjap-33-1114

High-resolution electron microscopy of extended defects in wurtzite crystals

Kunio Suzuki, Masaki Ichihara, Shin Takeuchi

Japanese Journal of Applied Physics 33(2), 1114 (1994).

Lattice defects in five wurtzite crystals, ZnO, BeO AlN GaN and InN, have been studied by high-resolution electron microscopy for samples pulverized at room temperature. High-density stacking faults were produced in BeO and GaN. With the weak-beam technique, dissociation of basal dislocations was observed iii BeO. By high-resolution lattice image observation. both dissociated and undissociated 60-degrees-dislocations were observed in ZnO, AIN and InN. Stacking fault energies were estimated from the separation of partials to be 0.10 +/- 0.02 J/m2 in ZnO, 0.041 +/- 0.009 J/m2 in BeO, 0.22 +/- 0.07 J/m2 in AIN and 0.041 +/- 0.008 j/M2 in InN. Stacking fault energies in wurtzite crystals have been correlated with the c/a ratio of the crystals. a + c dislocations climb-dissociated along the basal plane were also observed in ZnO and BeO.

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1994JJAPR..33.1114S

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