Data for reference nakamura-jjap-32-l338

Cd-doped InGaN films grown on GaN films

Shuji Nakamura, Naruhito Iwasa, Shin-ichi Nagahama

Japanese Journal of Applied Physics 32(Pt. 2, 3A), L338 (1993).

Cd-doped InGaN films were grown for the first time at temperatures between 810 C and 780 C.

This item is cited by the following items in the database:

  1. Degradation mechanisms in AlGaN/InGaN/GaN light sources
  2. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by M. Osinski from sakai24.svbl.tokushima-u.ac.jp. on November 17, 1997 9:03:18 PM

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