Data for reference nakamura-jjap-32-l16

Si-doped InGaN films grown on GaN films

Shuji Nakamura, Takashi Mukai, Masayuki Senoh

Japanese Journal of Applied Physics 32(Pt. 2, No. 1A/B), L16 (1993).

High-quality Si-doped InGaN films were grown on GaN films for the first time.

This item is cited by the following items in the database:

  1. Degradation mechanisms in AlGaN/InGaN/GaN light sources

Contributed by M. Osinski from sakai24.svbl.tokushima-u.ac.jp. on November 17, 1997 9:26:11 PM

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