hirosawa-jjap-32-l1039

Data for reference hirosawa-jjap-32-l1039

Growth of Single Crystal AlxGa1-XN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy

K Hirosawa, K Hiramatsu, N Sawaki, et al.

Japanese Journal of Applied Physics 32(8), L1039 (1993).

AlxGa1-xN(0001) films with flat surfaces in the composition range of x=0.1-0.4 are successfully grown directly on Si(111) using two-flow-channel metalorganic vapor phase epitaxy (MOVPE). Reflection high-energy electron diffraction (RHEED) patterns are spotty for growth temperatures between 1000-degrees-C and 1150-degrees-C, indicating that the AlxGa1-xN film is a single crystal. In addition, good control of the AlN mole fraction (0.1 to 0.4) is achieved by changing the gas ratio of the group III gas sources.

Contributed by E. Hellman

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