Japanese Journal of Applied Physics 32(7b), L1000 (1993).
The difference in the refractive index at a wavelength of 370 nm between GaN and AlGaN (x = 0.1) is found to be about 0.19. With use of AlGaN/GaN double heterostructures, the threshold power for surface-stimulated emission by optical pumping at room temperature has been markedly decreased to about one-twentieth that of a bulk GaN layer. The mechanism of the stimulated emission in this system is discused.
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Contributed by O. Ambacher from pc65.wsi.tu-muenchen.de. on September 10, 1997 3:41:07 AM
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