Data for reference sakai-jjap-32-4413

Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

Shiro Sakai, Yoshihiro Ueta, Yoji Terauchi

Japanese Journal of Applied Physics 32, 4413 (1993).

This item is cited by the following items in the database:

  1. Surface Morphology and Structure of GaNxAs1-x
  2. Optical Properties of GaNAs Grown by MBE
  3. Electronic Properties of Ga(In)NAs Alloys

Contributed by A submitted manuscript, on Tuesday, July 1, 1997 12:48:05 PM

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