Data for reference hiramatsu-jjap-32-1528

Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor PHASE Epitaxy

K. Hiramatsu, T. Detchprohm, J. Akasaki

Japanese Journal of Applied Physics 32, 1528 (1993).

This item is cited by the following items in the database:

  1. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
  2. Localized Epitaxy of GaN by HVPE on patterned Substrates
  3. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by A submitted manuscript, on Saturday, September 26, 1998 12:08:24 PM

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