Data for reference nakamura-jjap-31-l1457

High-Quality InGaN Films Grown on GaN Films

S. Nakamura, T. Mukai

Japanese Journal of Applied Physics 31(10B), L1457 (1992).

InGaN films were grown on GaN films with a high indium source flow rate and high growth temperatures between 780oC and 830oC.

This item is cited by the following items in the database:

  1. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  2. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  3. MOVPE of Thick InGaN on Sapphire Substrate
  4. Degradation mechanisms in AlGaN/InGaN/GaN light sources

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