Relaxation Process of the Thermal Strain in the GaN/Al₂O₃ Heterostructure and Determination of the Intrinstic Lattice Constants of GaN Free from the Strain

Japanese Journal of Applied Physics 31(10B), L1454 (1992).

The relaxation process of the thermal strain in a GaN film due to the thermal expansion coefficient difference in the GaN/Al₂O₃ heterostructure is studied by varying the film thickness of GaN in a wide range from 1 to 1200 µm. The lattice constant c has a large value of 5.191 Å at a film thickness less than a few microns, while it decreases to about 150 µm, and becomes constant above 150 µm, indicating that the strain is almost comletely relaxed. The intrinstic lattice constants of wurtzite GaN free from strain, a and c, are determined to be 3.1892 and 5.1850, respectively.

This item cites the following items in the database:

1. High pressure solution growth of GaN
2. Heteroepitaxial growth and the effects of strain on the luminescent properties of GaN films on (11&twobar;0) and (0001) sapphire substrates
3. Growth of single crystal GaN substrate using hydride vapor phase epitaxy
4. Study of cracking mechanism in GaN/alpha -Al₂O₃ structure
5. Variation of lattice parameters in GaN with stochiometry and doping
6. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga _1-xAl _xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE

This item is cited by the following items in the database:

1. Physical Properties of Bulk GaN Crystals Grown by HVPE
2. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
3. Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

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