Thermal Annealing Effects on P-Type Mg-Doped GaN Films

Japanese Journal of Applied Physics 31(2-2B), L139 (1992).

Low resistivity p-type GaN films were obtained by N₂-ambient thermal annealing at temperatures above 700°ree;C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1 x 10⁶Ω-cm. After thermal annealing at temperatures above 700°ree;C, the resistivity, hole carrier concentration and hole mobility became 2 Ω-cm, 3x10¹⁷/cm³ and 10 cm²/V-s, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°ree;C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°ree;C, of thermal annealing

This item is cited by the following items in the database:

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4. Degradation mechanisms in AlGaN/InGaN/GaN light sources
5. GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
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Contributed by E. S. Hellman from ants.lucent.com. on Tuesday, November 5, 1996 2:32:37 PM

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