igarashi-jjap-31-3791

Data for reference igarashi-jjap-31-3791

Heteroepitaxial Growth of GaN1-XPx (x Less Than or Equal to 0.09) on Sapphire Substrates

O Igarashi

Japanese Journal of Applied Physics 31(12A), 3791 (1992).

Gallium nitride phosphide single crystals having the maximum composition of x is similar to 0.09 were epitaxially deposited on (0001) sapphire substrates. The growth was carried out by the vapor phase reaction of the Ga-Br2-PH3-NH3-N2 system. The above maximum composition was attained at a substrate temperature of 980-degrees-C.

Contributed by E. Hellman

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