Data for reference nakamura-jjap-31-2883

Si- and Ge doped GaN films grown with GaN buffers layers

S. Nakamura, T. Mukai, M. Senoh

Japanese Journal of Applied Physics 31, 2883 (1992).

This item is cited by the following items in the database:

  1. Yellow luminescence in Mg-doped GaN
  2. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  3. Properties of GaN epilayers grown on misoriented sapphire substrates

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