Data for reference nakamura-jjap-31-1258

Hole compensation mechanism of p-type GaN films

Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh, Takashi Mukai

Japanese Journal of Applied Physics 31(Pt. 1, No. 5A), 1258 (1992).

Hydrogenation process of forming acceptor-H neutral complexes in p-type GaN is proposed. Formation of acceptor-H neutral complexes causes hole compensation, and deep-level and weak blue emissions in photoluminescence.

This item is cited by the following items in the database:

  1. Degradation mechanisms in AlGaN/InGaN/GaN light sources
  2. Paramagnetic defects in GaN

Contributed by M. Osinski from sakai24.svbl.tokushima-u.ac.jp. on November 17, 1997 9:34:38 PM

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