Data for reference pribat-jjap-30-l431

Defect Filtering in GaAs on Si by Conformal Growth

D. Pribat, V. Provendier, M. Dupuy, P. Legagneux, C. Collet

Japanese Journal of Applied Physics 30(3B), L431 (1991).

This item is cited by the following items in the database:

  1. Localized Epitaxy of GaN by HVPE on patterned Substrates

Contributed by A submitted manuscript, on Tuesday, October 20, 1998 2:51:02 AM

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