Data for reference nakamura-jjap-30-l1998

High-power GaN p-n junction blue-light-emitting diodes

S. Nakamura, T. Mukai, M. Senoh

Japanese Journal of Applied Physics 30, L1998 (1991).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  3. GaN Based p‐n Structures Grown on SiC Substrates
  4. Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  5. Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
  6. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
  7. High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
  8. GaN based LED's with different recombination zones
  9. Degradation mechanisms in AlGaN/InGaN/GaN light sources
  10. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  11. GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors
  12. Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides

Contributed by S. Strite

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