Data for reference nakamura-jjap-30-l1708

Highly p-typed Mg-doped GaN films grown with GaN buffer layer

S. Nakamura, M. Senoh, T. Mukai

Japanese Journal of Applied Physics 30, L1708 (1991).

Mg-doped GaN films were grown with GaN buffer layers on a sapphire substrate. Hall effect measurement of as-grown GaN films showed that the hole concentration was 2x1015/cm3, the hole mobility was 9 cm2/V-s and the resistivity was 320 Ω-cm at room temperature. After the low-energy electron-beam irradiation (LEEBI) treatment, each value became 3x1018/cm2, 9 cm2/sup> This item is cited by the following items in the database:

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