GaN Growth Using GaN Buffer Layer

Japanese Journal of Applied Physics 30, L1705 (1991).

High-quality gallium Nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a 200 Å-GaN buffer layer. The carrier concentration and Hall mobility were 4x10¹⁶/cm³ and 600 cm²/V-s, respectively, at room temperature. The values became 8x10¹⁵/cm³ and 1500 cm²/V-s at 77K, respectively. These values of the Hall mobility are the highest ever reported for GaN films. The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200Å.

This item is cited by the following items in the database:

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7. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
8. High quality GaN films - growth and properties
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Contributed by S. Strite

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