Data for reference fujieda-jjap-30-l1665

Structure control of GaN films grown on (001) GaAs substrates by GaAs surface pretreatments

S. Fujieda, Y. Matsumoto

Japanese Journal of Applied Physics 30, L1665 (1991).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

Contributed by S. Strite

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