Data for reference itoh-jjap-30-1924

Metalorganic vapor phase epitaxial growth and properties of GaN/Al 0.1Ga0.9N layered structures

K. Itoh, T. Kawamoto, H. Amano, K. Hiramatsu, I. Akasaki

Japanese Journal of Applied Physics 30, 1924 (1991).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.

Contributed by S. Strite

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