Data for reference nakamura-jjap-30-1620

In situ monitoring of GaN growth using interference effects

S. Nakamura

Japanese Journal of Applied Physics 30, 1620 (1991).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  3. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  4. In Situ Control of GaN Growth by Molecular Beam Epitaxy
  5. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  6. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by S. Strite
Modified by Phil w. Yu from 203.237.41.131 on Wednesday, September 11, 1996 9:42:56 AM

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