Data for reference ito-jjap-30-1604Cathodoluminescence properties of undoped and Zn-doped AlxGa1-xN grown by metalorganic vapor phase epitaxy
K. Ito, H. Amano, K. Hiramatsu, I. Akasaki
Japanese Journal of Applied Physics 30, 1604 (1991).
This item is cited by the following items in the database:
- GaN, AlN, and InN: A review
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