Data for reference fujieda-jjap-29-l364

Control of the electrical properties of AlN/thin-a-Si/GaAs MIS diodes by GaAs surface pretreatments

S. Fujieda, Y. Mochizuki, K. Akimoto, I. Hirosawa, Y. Matsumoto, J. Matsui

Japanese Journal of Applied Physics 29, L364 (1990).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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