Data for reference fujieda-jjap-29-l2099

Thermal stability of the AlN/a-Si/GaAs MIS diodes with different GaAs surface stochiometry

S. Fujieda

Japanese Journal of Applied Physics 29, L2099 (1990).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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