Data for reference amano-jjap-29-l205

Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer

H. Amano, T. Asahi, I. Akasaki

Japanese Journal of Applied Physics 29, L205 (1990).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.
  3. New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
  4. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes

Contributed by S. Strite

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