Data for reference amano-jjap-28-l2112

p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation

H. Amano, M. Kito, K. Hiramatsu, I. Akasaki

Japanese Journal of Applied Physics 28, L2112 (1989).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Dry patterning of InGaN and InAlN
  3. Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.
  4. Raman Determination of the Phonon Deformation Potentials in α-GaN
  5. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  6. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  7. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  8. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
  9. Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
  10. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
  11. p-doping of GaN by MOVPE
  12. Optical properties of electron-irradiated GaN
  13. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  14. Free excitons in strained MOCVD-grown GaN layers
  15. Effect of Photo-Assisted RIE Damage on GaN

Contributed by S. Strite

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