Data for reference sato-jjap-28-l1641

Growth of InN on GaAs substrates by the reactive evaporation method

Y. Sato, S. Sato

Japanese Journal of Applied Physics 28, L1641 (1989).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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