Data for reference nagatomo-jjap-28-l1334

Properties of Ga 1-xIn xN films prepared by MOVPE

T. Nagatomo, T. Kuboyama, H. Minamino, O. Omoto

Japanese Journal of Applied Physics 28, L1334 (1989).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals

Contributed by S. Strite

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