Data for reference amano-jjap-27-l1384

Heteroepitaxial growth and the effects of strain on the luminescent properties of GaN films on (11&twobar;0) and (0001) sapphire substrates

H. Amano, K. Hiramatsu, I. Akasaki

Japanese Journal of Applied Physics 27, L1384 (1988).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  3. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  4. Relaxation Process of the Thermal Strain in the GaN/Al2O3 Heterostructure and Determination of the Intrinstic Lattice Constants of GaN Free from the Strain
  5. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  6. Effect of internal absorption on cathodoluminescence from GaN

Contributed by S. Strite

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 12:02:50 PM.
© 1998 The Materials Research Society